Extraction of small-signal model parameters of silicon MOSFET for RF applications
โ Scribed by Anisha Goswami; Anju Agrawal; Mridula Gupta; R. S. Gupta
- Publisher
- John Wiley and Sons
- Year
- 2000
- Tongue
- English
- Weight
- 196 KB
- Volume
- 27
- Category
- Article
- ISSN
- 0895-2477
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๐ SIMILAR VOLUMES
An extraction technique to determine the small-signal HBT equiยจalent circuit is presented. Some of the extrinsic element ยจalues are extracted by using an analytical approach, while the remaining ones are calculated adopting a statistical method. All of the model elements are uniquely determined. Sat
rower than the achieved ; 25% impedance bandwidth. According to the measurements, good dual linear polarization characteristics can be realized between the two resonance frequencies.
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