An analysis of the kink phenomenon of scattering parameter S22 in RF power mosfets for system-on-chip (SOC) applications
✍ Scribed by Yo-Sheng Lin; Shey-Shi Lu
- Publisher
- John Wiley and Sons
- Year
- 2003
- Tongue
- English
- Weight
- 183 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
In this paper, the kink effect in scattering parameter S~22~ of RF power MOSFETs with drain‐to‐spacer offset is explained quantitatively for the first time. Our results show that for RF power MOSFETs the output impedance can be represented by a “shifted” series RC circuit at low frequencies and a “shifted” parallel RC circuit at high frequencies. The appearance of the kink point of S~22~ in a Smith chart is caused by this inherent ambivalent characteristic of the output impedance. It is found that an increase of drain‐to‐spacer offset enhances the kink effect. In addition, the kink effect in S~22~ of RF power MOSFETs can also be interpreted in terms of poles and zeros. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 36: 371–376, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10767