An accurate and broadband method for heterojunction bipolar transistors (HBTs) small-signal model parameters is presented in this article. This method differs from previous ones by extracting the equivalent-circuit parameters without using a special test structure or global numerical optimization te
Extraction of HBT small-signal model parameters based on a statistical approach
✍ Scribed by H. Ghaddab; F. M. Gannouchi; F. Choubani; A. Bouallegue
- Publisher
- John Wiley and Sons
- Year
- 1997
- Tongue
- English
- Weight
- 136 KB
- Volume
- 16
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
An extraction technique to determine the small-signal HBT equi¨alent circuit is presented. Some of the extrinsic element ¨alues are extracted by using an analytical approach, while the remaining ones are calculated adopting a statistical method. All of the model elements are uniquely determined. Satisfactory results are obtained for two different size HBTs up to 30 GHz.
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