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Small-signal modeling of a PHEMT up to 110 GHz based on the genetic algorithm

✍ Scribed by Chee Cheong Joseph Leong; Zhongxiang Shen; Lai Choon Tay


Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
360 KB
Volume
29
Category
Article
ISSN
0895-2477

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✦ Synopsis


Abstract

An improved small‐signal model for a PHEMT (pseudomorphic high‐electron‐mobility transistor) is presented in this paper. Both the extrinsic and intrinsic parameters of the small‐signal model are determined using GA (genetic algorithm) optimization. First, parameter extraction of a small‐signal model is performed on a 2×100 μm PHEMT from 444.6 MHz to 40 GHz. Next, the GA is used to extract the parameters of an improved small‐signal model from 2 up to 110 GHz. The results show very good agreement between calculated and measured S‐parameters over the entire bandwidth. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 29: 367–373, 2001.