✦ LIBER ✦

A novel direct parameter-extraction method for GaInP/GaAs HBTs small-signal model

✍ Scribed by Haiwen Liu; Xiaowei Sun; Zhengfan Li; Junfa Mao

Publisher: John Wiley and Sons
Year: 2004
Tongue: English
Weight: 122 KB
Volume: 14
Category: Article
ISSN: 1096-4290
DOI: 10.1002/mmce.20032

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✦ Synopsis

An accurate and broadband method for heterojunction bipolar transistors (HBTs) small-signal model parameters is presented in this article. This method differs from previous ones by extracting the equivalent-circuit parameters without using a special test structure or global numerical optimization techniques. The main advantage of this method is that a unique and physically meaningful set of intrinsic parameters is extracted from impedance and admittance representation of the measured S-parameters in the frequency range of 1-12 GHz under extracted-bias conditions. An equivalent circuit for the HBT under a forward-bias condition is proposed for extraction of access resistance and parasitic inductance. The method yields a deviation of less then 5% between the measured and modeled S-parameters.

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