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Direct extraction technique for a small-signal MOSFET equivalent circuit with substrate parameters

✍ Scribed by Seonghearn Lee

Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
111 KB
Volume
39
Category
Article
ISSN
0895-2477

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✦ Synopsis

Abstract

A simple and efficient method to extract model parameters of a small‐signal MOSFET equivalent circuit, including substrate resistance and capacitance, is proposed. Unlike previous methods, substrate parameters, resistances, and inductances are directly determined without any curve‐fitting optimization. Good agreement between the measured and modeled S parameters is observed up to 40 GHz, thus verifying the accuracy of the model and its extraction method. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 39: 344–347, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11210

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