𝔖 Bobbio Scriptorium
✦   LIBER   ✦

A robust parameter extraction method for HBT small-signal equivalent circuit

✍ Scribed by Sung-Jin Ho; Min Ki Choi; Daniel W. van der Weide

Publisher
John Wiley and Sons
Year
2007
Tongue
English
Weight
548 KB
Volume
49
Category
Article
ISSN
0895-2477

No coin nor oath required. For personal study only.

✦ Synopsis

Abstract

An improved pad‐deembedding technique for InGaP/GaAs HBT reducing uncertainty in measurement and equivalent circuit is proposed. Intrinsic elements are obtained by iteratively determining the external and internal base resistance. The extracted equivalent circuits demonstrate good agreement with the measured S‐parameters obtained from 45 MHz to 40 GHz for different sizes of HBTs. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 1845–1848, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22573

📜 SIMILAR VOLUMES

Direct extraction technique for a small-
Direct extraction technique for a small-signal MOSFET equivalent circuit with substrate parameters
✍ Seonghearn Lee 📂 Article 📅 2003 🏛 John Wiley and Sons 🌐 English ⚖ 111 KB 👁 1 views

## Abstract A simple and efficient method to extract model parameters of a small‐signal MOSFET equivalent circuit, including substrate resistance and capacitance, is proposed. Unlike previous methods, substrate parameters, resistances, and inductances are directly determined without any curve‐fitti

A novel direct parameter-extraction meth
A novel direct parameter-extraction method for GaInP/GaAs HBTs small-signal model
✍ Haiwen Liu; Xiaowei Sun; Zhengfan Li; Junfa Mao 📂 Article 📅 2004 🏛 John Wiley and Sons 🌐 English ⚖ 122 KB 👁 1 views

An accurate and broadband method for heterojunction bipolar transistors (HBTs) small-signal model parameters is presented in this article. This method differs from previous ones by extracting the equivalent-circuit parameters without using a special test structure or global numerical optimization te

A method to simultaneously extract the s
A method to simultaneously extract the small-signal equivalent circuit and noise parameters of heterojunction bipolar transistors
✍ Ma. Carmen Maya; Antonio Lázaro; Lluís Pradell 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 351 KB 👁 1 views

## Abstract A method to extract the elements of the small‐signal equivalent circuit and the noise parameters (NPs) of heterojunction bipolar transistors (HBTs) is presented. The extraction is done by simultaneous fitting of the measured __S__‐parameters, noise figure (for a well‐matched impedance),