Analyses and wideband modeling (DC-to-50 GHz) of dummy open devices on silicon for accurate RF devices and ICS de-embedding applications
✍ Scribed by Yo-Sheng Lin; Chi-Chen Chen; Hsiao-Bin Liang; Meng-Shiung Huang
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 282 KB
- Volume
- 49
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
In this work, a dummy open device with ground guard‐ring and another dummy open device without ground guard‐ring were measured and modeled from DC‐to‐50 GHz for precise de‐embedding of the parasitic part which surrounds the intrinsic part of the RF devices (i.e. MOSFET, SiGe HBT, etc.) and the RF‐ICs on silicon. The results show that both the input impedance and the output impedance of the dummy open device with ground guard ring can be simplified to a simple series RC circuit at low frequencies, and then a “shifted” parallel RC circuit at high frequencies. It is this intrinsic ambivalent characteristic of the input and the output impedance that causes the appearance of the kink phenomena of S~11~ and S~22~ in the Smith chart. Moreover, the reason why adding a ground guard‐ring underneath the signal pad makes the kink phenomena of S~11~ and S~22~ less prominent (or disappeared) can also be explained by our theory. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 879–882, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22283