A method of extracting mosfet parameters with small model dependency using a common intermediate model

A direct method to extract RF MOSFET mod

A direct method to extract RF MOSFET model parameters using common source-gate and source-drain configurations

✍ Seonghearn Lee 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 299 KB

## Abstract A direct extraction method is newly developed to determine RF MOSFET model parameters using two‐port parameter equation derived from two zero‐bias equivalent circuits under common source‐gate and source‐drain configurations. This method is much simpler and more accurate than conventiona