A direct method to extract RF MOSFET model parameters using common source-gate and source-drain configurations
✍ Scribed by Seonghearn Lee
- Publisher
- John Wiley and Sons
- Year
- 2008
- Tongue
- English
- Weight
- 299 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
A direct extraction method is newly developed to determine RF MOSFET model parameters using two‐port parameter equation derived from two zero‐bias equivalent circuits under common source‐gate and source‐drain configurations. This method is much simpler and more accurate than conventional ones using common source‐bulk configuration, because parasitic resistances are directly extracted from low‐frequency data without a complicated linear regression of high‐frequency data and capacitances are directly determined without any inappropriate assumptions. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 915–917, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23231