In this article, two approaches for modeling DC characteristics for MOSFET based on neuro-space mapping (SM) are proposed. The first approach makes use of classical neuro-SM technology, while the second combines neuro-SM with prior knowledge input and source difference method. The formulas for obtai
โฆ LIBER โฆ
Bias-dependent small-signal modeling based on neuro-space mapping for MOSFET
โ Scribed by Shoulin Li; Jiali Cheng; Bo Han; Jianjun Gao
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 866 KB
- Volume
- 21
- Category
- Article
- ISSN
- 1096-4290
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โฆ Synopsis
In this article, bias-dependent small-signal modeling approach based on neuro-space mapping is proposed for MOSFET. Good agreement is obtained between the simulated and measured results for a 130 nm MOSFET in the frequency range of 100 MHz-40 GHz confirming the validity and effectiveness of our approach. In addition, higher accuracy is achieved by our approach in contrast to conventional empirical model.
๐ SIMILAR VOLUMES
Neuro-space mapping-based DC modeling fo
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Shoulin Li; Bo Han; Jiali Cheng; Jianjun Gao
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Article
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2010
๐
John Wiley and Sons
๐
English
โ 439 KB