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Neuro-space mapping-based DC modeling for 130-nm MOSFET

✍ Scribed by Shoulin Li; Bo Han; Jiali Cheng; Jianjun Gao

Publisher: John Wiley and Sons
Year: 2010
Tongue: English
Weight: 439 KB
Volume: 20
Category: Article
ISSN: 1096-4290
DOI: 10.1002/mmce.20469

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✦ Synopsis

In this article, two approaches for modeling DC characteristics for MOSFET based on neuro-space mapping (SM) are proposed. The first approach makes use of classical neuro-SM technology, while the second combines neuro-SM with prior knowledge input and source difference method. The formulas for obtaining the transconductance and output conductance in two approaches are derived. The I À V characteristics as well as their conductances obtained by the formulas in two approaches are compared to the measured data. Experimental results, which confirm the validity of our approaches, are also presented. V C 2010

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In this article, bias-dependent small-signal modeling approach based on neuro-space mapping is proposed for MOSFET. Good agreement is obtained between the simulated and measured results for a 130 nm MOSFET in the frequency range of 100 MHz-40 GHz confirming the validity and effectiveness of our appr