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SIMULATIONS OF FIELD-PLATED AND RECESSED GATE GALLIUM NITRIDE-BASED HETEROJUNCTION FIELD-EFFECT TRANSISTORS

✍ Scribed by Turin, Valentin O.; Shur, Michael S.; Veksler, Dmitry B.

Book ID
120059722
Publisher
World Scientific Publishing Company
Year
2007
Tongue
English
Weight
619 KB
Volume
17
Category
Article
ISSN
0129-1564

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A quasi-two-dimensional model was performed for the analysis of dual-gate heterojunction field effect transistors. It constitutes a versatile tool for the understanding of transistor physical behavior and device optimization difficult to perform due to the large number of parameters to consider. The