✦ LIBER ✦
Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB
✍ Scribed by Keller, S.; Yi-Feng Wu; Parish, G.; Naiqian Ziang; Xu, J.J.; Keller, B.P.; DenBaars, S.P.; Mishra, U.K.
- Book ID
- 114538605
- Publisher
- IEEE
- Year
- 2001
- Tongue
- English
- Weight
- 133 KB
- Volume
- 48
- Category
- Article
- ISSN
- 0018-9383
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