Quasi-two-dimensional simulation of dual-gate pseudomorphic heterojunction field effect transistors

✍ Scribed by F. Duhamel; J. C. De Jaeger; Y. Butel; M. Lefebvre; G. Salmer

• Publisher: John Wiley and Sons
• Year: 1998
• Tongue: English
• Weight: 322 KB
• Volume: 8
• Category: Article
• ISSN: 1096-4290
• DOI: 10.1002/(sici)1099-047x(199805)8:3<256::aid-mmce9>3.0.co;2-h

✦ Synopsis

A quasi-two-dimensional model was performed for the analysis of dual-gate heterojunction field effect transistors. It constitutes a versatile tool for the understanding of transistor physical behavior and device optimization difficult to perform due to the large number of parameters to consider. The DC characteristics and the variations of the equivalent circuit elements under cascode configuration can be predicted vs. the different biases. A comparison between physical two-dimensional simulation and experiment results allows us to validate this approach.