A quasi-two-dimensional model was performed for the analysis of dual-gate heterojunction field effect transistors. It constitutes a versatile tool for the understanding of transistor physical behavior and device optimization difficult to perform due to the large number of parameters to consider. The
β¦ LIBER β¦
Transport of quasi-two-dimensional electrons in heterojunction field effect transistors
β Scribed by W. Ted Masselink
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 771 KB
- Volume
- 231
- Category
- Article
- ISSN
- 0040-6090
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## Abstract ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 200 leading journals. To access a ChemInform Abstract, please click on HTML or PDF.
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