Quasi-two-dimensional simulation of dual
✍
F. Duhamel; J. C. De Jaeger; Y. Butel; M. Lefebvre; G. Salmer
📂
Article
📅
1998
🏛
John Wiley and Sons
🌐
English
⚖ 322 KB
A quasi-two-dimensional model was performed for the analysis of dual-gate heterojunction field effect transistors. It constitutes a versatile tool for the understanding of transistor physical behavior and device optimization difficult to perform due to the large number of parameters to consider. The