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Quasi one-dimensional in-plane-gate field-effect-transistor

✍ Scribed by U. Meiners; H. Brugger; B.E. Maile; C. Wölk; F. Koch


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
309 KB
Volume
37
Category
Article
ISSN
0038-1101

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Quasi-two-dimensional simulation of dual
✍ F. Duhamel; J. C. De Jaeger; Y. Butel; M. Lefebvre; G. Salmer 📂 Article 📅 1998 🏛 John Wiley and Sons 🌐 English ⚖ 322 KB

A quasi-two-dimensional model was performed for the analysis of dual-gate heterojunction field effect transistors. It constitutes a versatile tool for the understanding of transistor physical behavior and device optimization difficult to perform due to the large number of parameters to consider. The