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A two-dimensional mathematical model of the insulated-gate field-effect transistor

✍ Scribed by M.S. Mock

Publisher
Elsevier Science
Year
1973
Tongue
English
Weight
774 KB
Volume
16
Category
Article
ISSN
0038-1101

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A quasi-two-dimensional model was performed for the analysis of dual-gate heterojunction field effect transistors. It constitutes a versatile tool for the understanding of transistor physical behavior and device optimization difficult to perform due to the large number of parameters to consider. The