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Comparison of MOS and Metal-Nitride-Semiconductor Insulated Gate Field-Effect Transistors under Electron Irradiation

✍ Scribed by Stanley, Alan G.

Book ID: 117930277
Publisher: IEEE
Year: 1966
Tongue: English
Weight: 705 KB
Volume: 13
Category: Article
ISSN: 0018-9499
DOI: 10.1109/tns.1996.4324368

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