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Simulation of silicon etching with KOH

โœ Scribed by H. Camon; Z. Moktadir

Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
601 KB
Volume
28
Category
Article
ISSN
0026-2692

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โœฆ Synopsis

Anisotropic chemical etching of monocrystalline silicon in KOH aqueous solution is investigated. The atomic scale model proposed is based on the influence of the OH group on chemical bonds. Etch rate and activation energies are calculated and extended to the complete etch rate polar diagram and compared to available experimental data. Finally, an analytical description of etch rate ratios is proposed.

๐Ÿ“œ SIMILAR VOLUMES

New trends in atomic scale simulation of
New trends in atomic scale simulation of wet chemical etching of silicon with koh
โœ H. Camon; Z. Moktadir; M. Djafari-Rouhani ๐Ÿ“‚ Article ๐Ÿ“… 1996 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 384 KB

A new atomic scale model has been developed to simulate anisotropic etching of silicon in KOH solutions. This model is based on the influence of the number of hydroxide groups attached to atoms. Etch rates and macroscopic activation energies have been calculated and compared with experimental data.

Selective etching of silicon in aqueous
Selective etching of silicon in aqueous KOH
โœ Lai-Cheng Chen; Minjan Chen; Chi-Chao Wan; Tay-Her Tsaur; Chenhsin Lien ๐Ÿ“‚ Article ๐Ÿ“… 1995 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 1024 KB

The polarization curves of p-type and n-type silicon in aqueous KOH were studied. It is indicated that both p-Si and n-Si exhibit active-passive transpassive behaviour. The difference in polarization curve between these two types of Si is attributed to the carriers' transport limitation. In the p-Si

KOH etching of high-index crystal planes
KOH etching of high-index crystal planes in silicon
โœ E. Herr; H. Baltes ๐Ÿ“‚ Article ๐Ÿ“… 1992 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 978 KB

## High -index silicon planes have been etched with KOH of concentrations ranging from 2 mol/l to 12 mol/l (lo-46 wt.%) at temperatures between 50 "C and 95 "C, using two kinds of samples. We have etched mechanically prepared {n 11) and {nnl) (n = 2, 3, 4) crystal planes which we obtained by bevel