✦ LIBER ✦

New trends in atomic scale simulation of wet chemical etching of silicon with koh

✍ Scribed by H. Camon; Z. Moktadir; M. Djafari-Rouhani

Publisher: Elsevier Science
Year: 1996
Tongue: English
Weight: 384 KB
Volume: 37
Category: Article
ISSN: 0921-5107
DOI: 10.1016/0921-5107(95)01473-x

No coin nor oath required. For personal study only.

✦ Synopsis

A new atomic scale model has been developed to simulate anisotropic etching of silicon in KOH solutions. This model is based on the influence of the number of hydroxide groups attached to atoms. Etch rates and macroscopic activation energies have been calculated and compared with experimental data. Microscopic surface roughness has been investigated for ( 100) and ( 111) surface.

📜 SIMILAR VOLUMES

Anisotropic wet etching silicon tips of

Anisotropic wet etching silicon tips of small opening angle in KOH solution with the additions of I2/KI

✍ Jianqiang Han; Shaoyong Lu; Qing Li; Xiaolu Li; Jiangying Wang 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 667 KB

Etching silicon tips in potassium hydroxide (KOH) solution has the advantages of simplicity, easy to handle, low-cost and homogeneous etching rate of the (1 0 0) crystal plane. But the opening angle of silicon tips etched in pure KOH solution or KOH solution saturated with isopropyl alcohol (IPA) ad