✦ LIBER ✦

KOH etching of high-index crystal planes in silicon

✍ Scribed by E. Herr; H. Baltes

Publisher: Elsevier Science
Year: 1992
Tongue: English
Weight: 978 KB
Volume: 31
Category: Article
ISSN: 0924-4247
DOI: 10.1016/0924-4247(92)80117-l

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✦ Synopsis

High

-index silicon planes have been etched with KOH of concentrations ranging from 2 mol/l to 12 mol/l (lo-46 wt.%) at temperatures between 50 "C and 95 "C, using two kinds of samples. We have etched mechanically prepared {n 11) and {nnl) (n = 2, 3, 4) crystal planes which we obtained by bevelling silicon samples at accurately adjusted angles. Furthermore, we etched samples that were cut out of industrially fabricated (211) wafers. The results for the two kinds of (211) samples are found to agree for crystal planes that keep their orientation during etching. Non-reproducible etch rates are obtained, however, for those high-index etch fronts that disintegrate into facets of dissimilar crystal orientations.

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