✦ LIBER ✦

Simulation of boron, phosphorus, and arsenic diffusion in silicon based on an integrated diffusion model, and the anomalous phosphorus diffusion mechanism

✍ Scribed by Uematsu, Masashi

Book ID: 121256265
Publisher: American Institute of Physics
Year: 1997
Tongue: English
Weight: 641 KB
Volume: 82
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.366030

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

On the anomalous diffusion of boron and

On the anomalous diffusion of boron and phosphorus in silicon

✍ Shaw, D. 📂 Article 📅 1972 🏛 John Wiley and Sons 🌐 English ⚖ 87 KB

The Enhanced Diffusion of Arsenic and Ph

The Enhanced Diffusion of Arsenic and Phosphorus in Silicon by Thermal Oxidation

✍ Ishikawa, Yutaka 📂 Article 📅 1982 🏛 The Electrochemical Society 🌐 English ⚖ 475 KB

The influence of the solubility limit on

The influence of the solubility limit on diffusion of phosphorus and arsenic into silicon

✍ E. Antoncik 📂 Article 📅 1994 🏛 Springer 🌐 English ⚖ 811 KB

Numerical solution of the nonlinear diff

Numerical solution of the nonlinear diffusion equation for the anomalous boron diffusion in silicon

✍ An, Dao Khac 📂 Article 📅 1985 🏛 John Wiley and Sons 🌐 English ⚖ 391 KB

The effect of phosphorus background conc

The effect of phosphorus background concentration on the diffusion of tin, arsenic and antimony in silicon

✍ A. Nylandsted Larsen; P.E. Andersen; P. Gaiduk; K. Kyllesbech Larsen 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 415 KB

lhe effect of phosphorus background concentration on the di]]i4sion of tin, arsenic and antimony in silicon has been studied for phosphorus concentrations between about 9x 10 ~' ~ and 5 x 10 :° cm-~, corresponding to 10 <-n/n i <-60. 7he effectiw, difJ'usion coefficients are found to be proportional

A model of high-and low-temperature phos

A model of high-and low-temperature phosphorus diffusion in silicon by a dual pair mechanism

✍ O. V. Aleksandrov 📂 Article 📅 2001 🏛 Springer 🌐 English ⚖ 123 KB