The influence of the solubility limit on diffusion of phosphorus and arsenic into silicon
โ Scribed by E. Antoncik
- Publisher
- Springer
- Year
- 1994
- Tongue
- English
- Weight
- 811 KB
- Volume
- 58
- Category
- Article
- ISSN
- 1432-0630
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๐ SIMILAR VOLUMES
lhe effect of phosphorus background concentration on the di]]i4sion of tin, arsenic and antimony in silicon has been studied for phosphorus concentrations between about 9x 10 ~' ~ and 5 x 10 :ยฐ cm-~, corresponding to 10 <-n/n i <-60. 7he effectiw, difJ'usion coefficients are found to be proportional
standard sodium dihydrogen phosphate (NaH:POa) solutions. The Lambert-Beer law was applicable over the range o.ooqg-o.oqg g P as phosphate. ## Results and discussion Results obtained for fourteen samples are given in Table I. The temperature and the time of heating the melt obtained from sodium d