The annual average degree of phosphorus retention (both TP and O f ) in reservoirs was found to depend mainly on the theoretical retention time (RT). The phosphorus retention ( R P ) is shown for some reservoirs in Czech Republic to be well approximated (standard deviation = 10.9) with RP,Tp) = 74.7
The effect of phosphorus background concentration on the diffusion of tin, arsenic and antimony in silicon
β Scribed by A. Nylandsted Larsen; P.E. Andersen; P. Gaiduk; K. Kyllesbech Larsen
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 415 KB
- Volume
- 4
- Category
- Article
- ISSN
- 0921-5107
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β¦ Synopsis
lhe effect of phosphorus background concentration on the di]]i4sion of tin, arsenic and antimony in silicon has been studied for phosphorus concentrations between about 9x 10 ~' ~ and 5 x 10 :Β° cm-~, corresponding to 10 <-n/n i <-60. 7he effectiw, difJ'usion coefficients are found to be proportional to high power of n/n i ]'or all three impurities. These results are discussed within the framework of'the percolation model.
π SIMILAR VOLUMES
standard sodium dihydrogen phosphate (NaH:POa) solutions. The Lambert-Beer law was applicable over the range o.ooqg-o.oqg g P as phosphate. ## Results and discussion Results obtained for fourteen samples are given in Table I. The temperature and the time of heating the melt obtained from sodium d