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The effect of phosphorus background concentration on the diffusion of tin, arsenic and antimony in silicon

✍ Scribed by A. Nylandsted Larsen; P.E. Andersen; P. Gaiduk; K. Kyllesbech Larsen


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
415 KB
Volume
4
Category
Article
ISSN
0921-5107

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✦ Synopsis


lhe effect of phosphorus background concentration on the di]]i4sion of tin, arsenic and antimony in silicon has been studied for phosphorus concentrations between about 9x 10 ~' ~ and 5 x 10 :Β° cm-~, corresponding to 10 <-n/n i <-60. 7he effectiw, difJ'usion coefficients are found to be proportional to high power of n/n i ]'or all three impurities. These results are discussed within the framework of'the percolation model.


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