๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

On the diffusion of donors into silicon: High concentration and nonequilibrium defect effects

โœ Scribed by D. Mathiot; J.C. Pfister


Publisher
Elsevier Science
Year
1983
Weight
333 KB
Volume
116
Category
Article
ISSN
0378-4363

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Effects of defect, carrier concentration
โœ Zhizhong Yuan; Dongsheng Li; Daoren Gong; Minghua Wang; Ruixin Fan; Deren Yang ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 232 KB

Silicon pn diodes were fabricated by ion implantation of B and P ions with different doses and subsequent annealing processes. Room temperature photoluminescence (PL) were investigated and the factors affecting the PL intensity were analyzed. Results show that both kinds of pn diodes have PL peak ce

The effect of phosphorus background conc
โœ A. Nylandsted Larsen; P.E. Andersen; P. Gaiduk; K. Kyllesbech Larsen ๐Ÿ“‚ Article ๐Ÿ“… 1989 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 415 KB

lhe effect of phosphorus background concentration on the di]]i4sion of tin, arsenic and antimony in silicon has been studied for phosphorus concentrations between about 9x 10 ~' ~ and 5 x 10 :ยฐ cm-~, corresponding to 10 <-n/n i <-60. 7he effectiw, difJ'usion coefficients are found to be proportional