Silicon pn diodes were fabricated by ion implantation of B and P ions with different doses and subsequent annealing processes. Room temperature photoluminescence (PL) were investigated and the factors affecting the PL intensity were analyzed. Results show that both kinds of pn diodes have PL peak ce
โฆ LIBER โฆ
On the diffusion of donors into silicon: High concentration and nonequilibrium defect effects
โ Scribed by D. Mathiot; J.C. Pfister
- Publisher
- Elsevier Science
- Year
- 1983
- Weight
- 333 KB
- Volume
- 116
- Category
- Article
- ISSN
- 0378-4363
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