𝔖 Bobbio Scriptorium
✦   LIBER   ✦

The effect of radiation induced defects on the performance of high resistivity silicon diodes

✍ Scribed by J. Matheson; M. Robbins; S. Watts

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
271 KB
Volume
377
Category
Article
ISSN
0168-9002

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Effects of defect, carrier concentration
Effects of defect, carrier concentration and annealing process on the photoluminescence of silicon pn diodes
✍ Zhizhong Yuan; Dongsheng Li; Daoren Gong; Minghua Wang; Ruixin Fan; Deren Yang πŸ“‚ Article πŸ“… 2007 πŸ› Elsevier Science 🌐 English βš– 232 KB

Silicon pn diodes were fabricated by ion implantation of B and P ions with different doses and subsequent annealing processes. Room temperature photoluminescence (PL) were investigated and the factors affecting the PL intensity were analyzed. Results show that both kinds of pn diodes have PL peak ce

The effects of UV radiation on several h
The effects of UV radiation on several high-performance polyimide composites
✍ Kiefer, Richard L; Herring, Kristin; Wylie, Benjamin J; Orwoll, Robert A; Thibea πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 96 KB πŸ‘ 2 views

Three high-performance polyimides were exposed at 177 Β°C to ultraviolet radiation at three different intensities and for three different times so that the product of intensity and time was a constant. Intensities of 1, 2 and 3 suns, and times of 500, 250 and 167 h were used. One sun is the power in