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Effects of radiation-induced defects on device performance in electron-irradiated SiC-MESFETs

✍ Scribed by K. Takakura; H. Ohyama; K. Uemura; M. Arai; S. Kuboyama; S. Matsuda; C. Kamezawa; E. Simoen; C. Claeys

Publisher: Elsevier Science
Year: 2006
Tongue: English
Weight: 163 KB
Volume: 9
Category: Article
ISSN: 1369-8001
DOI: 10.1016/j.mssp.2006.01.028

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