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Radiation-induced defects in SiC-MESFETs after 2-MeV electron irradiation

✍ Scribed by H. Ohyama; K. Takakura; K. Uemura; K. Shigaki; T. Kudou; M. Arai; S. Kuboyama; S. Matsuda; C. Kamezawa; E. Simoen; C. Claeys

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
112 KB
Volume
376-377
Category
Article
ISSN
0921-4526

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✦ Synopsis

The impact of radiation damage on the device performance of 4H-SiC metal Schottky field effect transistors, which are irradiated at room temperature with 2-MeV electrons, is studied. No performance degradation is observed by 1 Γ‚ 10 15 e=cm 2 , while a slight increase of the linear drain current together with a decrease of the threshold voltage are noticed for 1 Γ‚ 10 16 e=cm 2 . The degradation for low electron fluence is mainly attributed to the radiation-induced decrease of the Schottky barrier height at the gate contact. For exposures over 1 Γ‚ 10 16 e=cm 2 , the drain current and transconductance decrease. The maximum transconductance for 1 Γ‚ 10 17 e=cm 2 is only 18% of the value before irradiation. Although no electron capture levels are observed before irradiation, three electron capture levels (E 1 -E 3 ) are induced after irradiation. The observed increase of the channel resistance is due to the induced lattice defects creating electron traps.

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