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Dose rate dependence of radiation-induced lattice defects and performance degradation in npn Si bipolar transistors by 2-MeV electron irradiation

✍ Scribed by K. Hayama; K. Takakura; H. Ohyama; S. Kuboyama; E. Simoen; A. Mercha; C. Claeys


Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
155 KB
Volume
401-402
Category
Article
ISSN
0921-4526

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