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Effect of gate interface on performance degradation of irradiated SiC-MESFET

✍ Scribed by H. Ohyama; K. Takakura; M. Yoneoka; K. Uemura; M. Motoki; K. Matsuo; M. Arai; S. Kuboyama; E. Simoen; C. Claeys

No coin nor oath required. For personal study only.

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