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Influence of the gate leakage current on the noise performance of MESFETs and MODFETs

✍ Scribed by François Danneville; Gilles Dambrine; Henri Happy; Patrick Tadyszak; Alain Cappy

Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 637 KB
Volume: 38
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(95)98678-v

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## Abstract The article presents a simple noise equation for the first time, including a contribution from the gate leakage, which accurately predicts the experimentally observed relatively flat minimum noise figure NF~min~ for a GaN HEMT with frequency, published by Lu et al. [1] © 2002 Wiley Peri