The Boltzmann transport equation is used to derive a set of conservation equations which is capable of describing the electron transport phenomena in a single-valley semiconductor. These conservation equations are averaged over the different valleys of the conduction band to develop another set of e
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A new approach to the determination of gate length and other parameters of GaAs MESFETs and MODFETs
โ Scribed by Michail F. Kokorev; Nicolai A. Maleev
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 386 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0038-1101
No coin nor oath required. For personal study only.
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