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Investigating the effects of the interface defects on the gate leakage current in MOSFETs

✍ Scribed by Ling-Feng Mao

Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 614 KB
Volume: 254
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2008.04.045

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