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Effects of bulk-impurity and interface-charge on the electron mobility in MOSFETs

✍ Scribed by F. Gámiz; J. Banqueri; J.E. Carceller; J.A. López-Villanueva

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
422 KB
Volume
38
Category
Article
ISSN
0038-1101

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The quantum mobility has been measured in δ-doped GaAs/Al x Ga 1-x As/GaAs structures in which one is able to vary the population of DX states. The experiments show that spatial correlations in the charge distribution enhance the quantum mobility. We are able to correctly account for these correlati