✦ LIBER ✦
The impact of pseudomorphic AlAs spacer layers on the gate leakage current of InAl As/InGaAs heterostructure field-effect transistors
✍ Scribed by U. Auer; R. Reuter; P. Ellrodt; C. Heedt; W. Prost; F. J. Tegude
- Publisher
- John Wiley and Sons
- Year
- 1996
- Tongue
- English
- Weight
- 420 KB
- Volume
- 11
- Category
- Article
- ISSN
- 0895-2477
No coin nor oath required. For personal study only.
✦ Synopsis
InP-based heterostmcture field-effect transistor, gate leakage current, impact ionization, channel-to-gate transfer rate of holes, pseudomorphic AlAs-spacer layer