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The influence of stacking faults on leakage currents of FET devices

✍ Scribed by G.H. Schwuttke; K. Brack; E.W. Hearn

Publisher
Elsevier Science
Year
1971
Tongue
English
Weight
233 KB
Volume
10
Category
Article
ISSN
0026-2714

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## Abstract Significant changes in quantum well laser performances when current leakage is not neglected are reported. Leakage effect is included extending three‐level rate equations. Derived SPICE model is used to optimize and improve the most important parameters of single quantum well lasers: th