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The influence of background carbon concentration on the transient enhanced diffusion of boron

✍ Scribed by Tomoya Saito; Jianxin Xia; Ryangsu Kim; Takenori Aoki; Yoshikazu Furuta; Yoshinari Kamakura; Hiroyuki Kobayashi; Kenji Taniguchi

Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
232 KB
Volume
85
Category
Article
ISSN
8756-663X

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lhe effect of phosphorus background concentration on the di]]i4sion of tin, arsenic and antimony in silicon has been studied for phosphorus concentrations between about 9x 10 ~' ~ and 5 x 10 :Β° cm-~, corresponding to 10 <-n/n i <-60. 7he effectiw, difJ'usion coefficients are found to be proportional