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The influence of the solubility limit on diffusion of as implants in silicon

✍ Scribed by E. Antoncik


Publisher
Springer
Year
1993
Tongue
English
Weight
876 KB
Volume
56
Category
Article
ISSN
1432-0630

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The effect of implantation temperature and oxygen dose on the structure of as-implanted separation by implantation of oxygen (SIMOX) wafers was studied by means of Rutherford backscattering spectrometry and ion channelling, secondary ion mass spectrometry and cross-sectional transmission electron mi