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On the mechanism of ion-implanted As diffusion in relaxed SiGe

✍ Scribed by S Eguchi; J.J Lee; S.J Rhee; D.L Kwong; M.L Lee; E.A Fitzgerald; I Åberg; J.L Hoyt

Publisher: Elsevier Science
Year: 2004
Tongue: English
Weight: 134 KB
Volume: 224
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2003.08.029

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