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Characterization of As+ ion-implanted layers in strained-Si/SiGe/Si hetero-structures

โœ Scribed by T Ishida; S Irieda; T Inada; N Sugii


Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
226 KB
Volume
224
Category
Article
ISSN
0169-4332

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Investigation of strain-relaxed SiGe thi
โœ Changchun Chen; Benhai Yu; Jiangfeng Liu; Jianqing Cao; Dezhang Zhu; Zhihong Liu ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 347 KB

Si 1ร€x Ge x thin films on the Ar + ion-implanted Si substrates with different implantation energy (30 keV, 40 keV and 60 keV) at the same implantation fluence (3 โ€ข 10 15 cm ร€2 ) were grown by ultra high vacuum chemical vapor deposition (UHVCVD). Various characterization technologies were used to cha