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ion implantation in strained-Si/SiGe/Si hetero-structures

โœ Scribed by J. Morioka; S. Irieda; Y. Ishidoya; T. Inada; N. Sugii


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
176 KB
Volume
242
Category
Article
ISSN
0168-583X

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Si 1ร€x Ge x thin films on the Ar + ion-implanted Si substrates with different implantation energy (30 keV, 40 keV and 60 keV) at the same implantation fluence (3 โ€ข 10 15 cm ร€2 ) were grown by ultra high vacuum chemical vapor deposition (UHVCVD). Various characterization technologies were used to cha