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Radiation damage induced by 5 keV Si+ ion implantation in strained-Si/Si0.8Ge0.2

✍ Scribed by T. Matsushita; W. Sakai; K. Nakajima; M. Suzuki; K. Kimura; A. Agarwal; H.-J. Gossmann; M. Ameen

No coin nor oath required. For personal study only.

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Radiation damage induced by 5&#xa0;keV Si+ ion implantation in strained-Si/Si0.8Ge0.2