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Rutherford backscattering research on the strained SiGe/Si structure

✍ Scribed by J.H. Hu; Y.L. Fan; D.W. Gong; X. Wang; Z.Y. Zhou

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
268 KB
Volume
92
Category
Article
ISSN
0038-1098

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Impact of Ge content on the gate oxide r
Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices
✍ Suresh Uppal; Mehdi Kanoun; John B. Varzgar; Sanatan Chattopadhyay; Sarah Olsen; πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 307 KB

In this paper we study the impact of the variation of Ge content on the gate oxide reliability of strained-Si/SiGe (s-Si/SiGe) MOS devices. MOS capacitors and n-MOSFET devices were fabricated on Si, and strained Si grown on SiGe virtual substrates with a Ge content of 10 and 30%. The devices had pol