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Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures

✍ Scribed by John B. Varzgar; Mehdi Kanoun; Suresh Uppal; Sanatan Chattopadhyay; Yuk Lun Tsang; Enrique Escobedo-Cousins; Sarah H. Olsen; Anthony O’Neill; Per-Erik Hellström; Jonas Edholm; Mikael Östling; Klara Lyutovich; Michael Oehme; Erich Kasper

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
345 KB
Volume
135
Category
Article
ISSN
0921-5107

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