𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Effect of strain-temperature stress on MOS structure with ultra-thin gate oxide

✍ Scribed by Chia-Nan Lin; Yi-Lin Yang; Wei-Ting Chen; Shang-Chih Lin; Kai-Chieh Chuang; Jenn-Gwo Hwu

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
872 KB
Volume
85
Category
Article
ISSN
0167-9317

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Effect of reverse substrate bias on ultr
Effect of reverse substrate bias on ultra-thin gate oxide n-MOSFET degradation under different stress modes
✍ Yao Zhao; Mingzhen Xu; Changhua Tan πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 169 KB

Degradation of ultra-thin gate oxide n-MOSFET with halo structure is studied under different stress modes with the increase of reverse substrate bias. The variation of device degradation is characterized by monitoring the substrate current during stress. When the gate voltage is smaller than a criti