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Thermal oxidation of strained Si/SiGe: impact of surface morphology and effect on MOS devices

✍ Scribed by S.H Olsen; A.G O’Neill; D.J Norris; A.G Cullis; S.J Bull; S Chattopadhyay; K.S.K Kwa; L.S Driscoll; A.M Waite; Y.T Tang; A.G.R Evans

Publisher: Elsevier Science
Year: 2004
Tongue: English
Weight: 435 KB
Volume: 109
Category: Article
ISSN: 0921-5107
DOI: 10.1016/j.mseb.2003.10.051

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