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Gate-oxide grown on the sidewalls and base of a U-shaped Si trench: effects of the oxide and oxide/Si interface condition on the properties of vertical MOS devices

✍ Scribed by S.A. Suliman; O.O. Awadelkarim; R.S. Ridley; G.M. Dolny

Publisher: Elsevier Science
Year: 2004
Tongue: English
Weight: 218 KB
Volume: 72
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2003.12.045

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