𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Phosphorus diffusion in the presence of threading dislocations in strain relaxed SiGe films

✍ Scribed by J.S. Christensen; A.Yu. Kuznetsov; A.E. Gunnaes; B.G. Svensson; H.H. Radamson

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
266 KB
Volume
9
Category
Article
ISSN
1369-8001

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Measuring Diffusion in the Presence of M
Measuring Diffusion in the Presence of Material Strain
✍ Timothy G. Reese; Van J. Wedeen; Robert M. Weisskoff πŸ“‚ Article πŸ“… 1996 πŸ› Elsevier Science 🌐 English βš– 439 KB

Material strain during the course of diffusion encoding by MRI will in general change the observed diffusional signal losses. These changes will occur even when the material returns cyclically to its initial location during the diffusion-evolution period. This effect derives from the modification of

Strain relaxation and formation of screw
Strain relaxation and formation of screw dislocations in YBCO films on MgO substrates
✍ M. Bauer; F. Baudenbacher; H. Kinder πŸ“‚ Article πŸ“… 1995 πŸ› Elsevier Science 🌐 English βš– 468 KB

We have studied the growth of the first monolayers of YBa2Cu307 (YBCO) films on MgO substrates by reflection high-energy electron diffraction (RHEED), atomic force and scanning tunneling microscopy (AFM, STM) and scanning electron microscopy (SEM). Up to a nominal thickness of 1.5 nm we find island