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Influence of co-implantation on the activation and diffusion of ultra-shallow extension implantation

โœ Scribed by Marc Herden; Daniel Gehre; Thomas Feudel; Andy Wei; Massimo Bersani; Giovanni Mannino; Jaap v.d. Berg

Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
251 KB
Volume
237
Category
Article
ISSN
0168-583X

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The trend for decreasing geometries within CMOS architecture is driving the need for ever shallower, highly doped, low resistivity layers in silicon. The conventional dopant of choice, boron, as a result of its light mass requires that implant energies be ever reduced to meet the demands of these sh